Russian scientists have found a way to create nanotubes that could contribute to the next generation of electronics. They explained that silicon nanotubes that take flat shape under the pressure of the metal can be spared by new ways that can help create a new generation of electronics using carbon instead of silicon. Silicon microprocessors are an essential part of almost all electronic devices ranging from mobile phones to airplanes. However, silicon’s capabilities have been practically maxed out. It is getting much more difficult to amplify silicon processors while simultaneously diminishing their size. Carbon nanotubes, which are monoatomic layers of graphene rolled in tubes, can replace silicon.
These nanotubes outperform silicon based on their electric properties, but at a certain size of less than several dozen nanometers, their resistance rapidly increases.
The resistance of transistors is composed of channel resistance and contact resistance. In the case of carbon nanotubes, the channel resistance is better when compared to silicon of the same length. The study has shown that the resistance increases because the metal used for junctions of a transistor flatten nanotubes because of surface tension.
The researchers presume that if smaller diameter nanotubes are used for manufacturing transistors, this flattening impact becomes less critical. Additionally, one could apply metals with smaller surface tension.
Source: TASS agency